TP0610T - Siliconix

TP0610T P-Channel Enhancement-Mode MOS Transistors

TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors .-r-Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) , TP061DE -60 10 -0.25 PACKAGE TO-206AC TP0610L -60 10 -0.18 TO-92 TP0610T -60 10 -0.12 80T-23 Performance Curves: VPOS06 (See Section 7) SOT-23 TOP VIEW TO-92 BOTTOM VIEW ~~ ~ ~ 1 SOURC.

Features

onds) h °C 300 THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL TP0610E TP0610L TP0610T UNITS Junction-to-Ambient RthJA 400 156 350 °C/W ~Pulse width limited by maximum junction temperature Reference Tc for all temperature testing 6-48 ~Siliconix ~ incorporated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage SYMBOL V(BR)OSS VGS(th) IGSS Zero Gate Voltage Drain Current On-State Drain Current 3 loss 10(ON) Drain-Source On-Reslstance3 rOS(ON) ~~~~:6~nductance 3 Common Source Output Conductance3 DYNAMIC Input Capa.