TN0620 - Supertex Inc

TN0620 N-Channel Enhancement-Mode Vertical DMOS FETs

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristi.

Features

► Low threshold (1.6V max.)
► High input impedance
► Low input capacitance (110pF typical)
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
► Complementary N- and P-channel devices Applications
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate.