TN0606 - Supertex Inc

TN0606 N-Channel Enhancement-Mode Vertical DMOS FETs

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characterist.

Features

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► Low threshold - 2.0V max.
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► High input impedance
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► Low input capacitance - 100pF typical
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► Fast switching speeds
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► Low on-resistance
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► Free from secondary breakdown
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► Low input and output leakage Applications
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► Logic level interfaces
  – ideal for TTL and CMOS
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► Solid state relays
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► Battery operated systems
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► Photo voltaic drives
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► Analog switches
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► General purpose line drivers
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► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. Thi.