TMS44409 - Texas Instruments

TMS44409 DYNAMIC RANDOM-ACCESS MEMORIES

OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each. This VCC VSS W 5-V Supply Ground Write Enable device features maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW stand.

Features

maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM. All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J-lead plastic surface-mount SOJ package ( DJ suffix) and a 20 / 26-lead plastic small outline packag.