The TM2SN64EPU is a 16M-byte, 168-pin dual-in-line memory module (DIMM). The DIMM is composed of eight TMS626812DGE, 2 097 152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic thin small-outline package (TSOP) mounted on a substrate with decoupling capacitors. See the TMS626812 data sheet (literature number SMOS687). The TM4SN64EPU is a 32M-byte, 168-pin DI.
g
EEPROM
’xSN64EPU-12A‡
SYNCHRONOUS
CLOCK CYCLE
TIME
(CtLC=K33)†
tCK2 (CL = 2)
12 ns
15 ns
ACCESS TIME
CLOCK TO
OUTPUT
tCK3
tCK2
(CL = 3) (CL = 2)
9 ns 9 ns
REFRESH INTERVAL
64 ms
’xSN64EPU-12
12 ns 18 ns 9 ns 10 ns
† CL = CAS latency ‡
–12A speed device is supported only at
–5 to +10% VDD
64 ms
description
The TM2SN64EPU is a 16M-byte, 168-pin dual-in-line memory module (DIMM). The DIMM is composed of eight TMS626812DGE, 2 097 152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic thin small-outline package (TSOP) mounted on a substrate with decoupling capacitors. See the .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TM2SN64EPH |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
2 | TM2SN64EPN |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
3 | TM2SJ64EPN |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
4 | TM2SJ64EPU |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
5 | TM2SR72EPH |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
6 | TM2SR72EPN |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
7 | TM2SR72EPU |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
8 | TM2001 |
Taiwan Microelectronics |
2.4-2.5GHz Front End Module | |
9 | TM200CZ-24 |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
10 | TM200CZ-2H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
11 | TM200CZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
12 | TM200CZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |