The TM2SJ64EPU is a 16M-byte, 144-pin small-outline dual-in-line memory module (SODIMM). The SODIMM is composed of eight TMS626812DGE, 2 097 152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic thin small-outline package (TSOP) mounted on a substrate with decoupling capacitors. See the TMS626812 data sheet (literature number SMOS687). operation The TM2SJ64E.
) (CL = 2) ’xSJ64EPU-12A† 12 ns 15 ns 9 ns 9 ns ’xSJ64EPU-12 12 ns 18 ns 9 ns 10 ns † −12A speed device is supported only at −5 to 10% VDD ‡ CL = CAS latency REFRESH INTERVAL 64 ms 64 ms description The TM2SJ64EPU is a 16M-byte, 144-pin small-outline dual-in-line memory module (SODIMM). The SODIMM is composed of eight TMS626812DGE, 2 097 152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic thin small-outline package (TSOP) mounted on a substrate with decoupling capacitors. See the TMS626812 data sheet (literature number SMOS687). operation The TM2SJ64EPU operates as eight TMS626812D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TM2SJ64EPN |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
2 | TM2SN64EPH |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
3 | TM2SN64EPN |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
4 | TM2SN64EPU |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
5 | TM2SR72EPH |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
6 | TM2SR72EPN |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
7 | TM2SR72EPU |
Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES | |
8 | TM2001 |
Taiwan Microelectronics |
2.4-2.5GHz Front End Module | |
9 | TM200CZ-24 |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
10 | TM200CZ-2H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
11 | TM200CZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
12 | TM200CZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |