TM2314FN - TECH MOS

TM2314FN N-Channel High Density Trench MOSFET

TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Paramet.

Features

●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150 Unit V V A A A W °C TA=25°C TA=75°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient Note a. Su.