SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. VDD AGND TREB_L TREB_R RIN ROUT LOUD_R RIN4 RIN3 RIN2 RIN1 LOUD_L LIN4 LIN3 1 2 3 4 5 TM2314 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 REF CLK DATA DGND OUT_L OUT_R BOUT_R BIN_R BOUT_L BIN_L LOUT LIN LIN1 LIN2 SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. SH.
.75 2 33 75 0 75 1.25 0 50 80 1 80 1.75 1.25 2 2 3 7.5 40 1.75 1.5 3 10 dB V K dB dB dB dB dB dB dB mV mV dB dB dB dB mV mV Av=0~20 dB Av=-20~-60 dB 0 0.5 37.5 1.25 100 0 1 75 4.5 S/N D 0.1 0.3 Sc SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. Vil Vih lin Vo Topt Tstg 1 3 -5 Io=1.6mA -40 +80 -65 +150 +5 0.4 V V V SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. SHENZHEN TITAN M ICRO ELECTRONI CS CO., LTD. 1 MSB 0 0 0 1 0 0 0 LSB MSB 0 1 1 1 1 0 0 0 0 1 1 0 0 1 1 1 B2 0 1 0 1 0 1 1 B1 B1 B1 B1 B1 G1 0 1 B0 B0 B0 B0 B0 G0 C3 C3 A2 A2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TM2312 |
Taimao |
N-Channel 20-V(D-S) MOSFET | |
2 | TM2313 |
TITAN MICRO ELECTRONICS |
Digital audio processing controller | |
3 | TM2314FN |
TECH MOS |
N-Channel High Density Trench MOSFET | |
4 | TM235VFS01-00 |
AVIC |
TFT LCD | |
5 | TM2001 |
Taiwan Microelectronics |
2.4-2.5GHz Front End Module | |
6 | TM200CZ-24 |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
7 | TM200CZ-2H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
8 | TM200CZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
9 | TM200CZ-M |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
10 | TM200DZ-24 |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
11 | TM200DZ-2H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE | |
12 | TM200DZ-H |
Mitsubishi Electric Semiconductor |
HIGH POWER GENERAL USE INSULATED TYPE |