TK125V65Z - Toshiba

TK125V65Z Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS�) TK125V65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK125V65Z DFN8x8 1: Gate 2: So.

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK125V65Z DFN8x8 1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink) Notice: Only use source 1 pin for gate input signal return. Please make sure that the main current flows into the source 2 pin. 4. Absolute Maximum Ratings (Note) (Ta = 25
� unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VG.