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·50W at 100℃ case temperature ·10A peak collector current ·High-voltage,high forward and reverse energy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition and switching regulator applications ·Characterized for operation in ignition and switching regulator.
ademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
* Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0
VCE(sat)-1
* Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-2
* Collector-Emitter Saturation Voltage IC= 10A; IB= 4A
VBE(sat)
* Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
* DC Current Gain
IC= 1A; VCE= 2V
hFE-2
* DC Current Gain
*:Pulse test PW≤300us,duty cycle≤1.5%
IC= 5A; VCE=2V
TIP55A
MIN MAX UNIT
250
V
1.2
V
2.5
.
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