TIP55A |
Part Number | TIP55A |
Manufacturer | INCHANGE |
Description | ·50W at 100℃ case temperature ·10A peak collector current ·High-voltage,high forward and reverse energy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
Features |
ademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 10A; IB= 4A
VBE(sat)* Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1* DC Current Gain
IC= 1A; VCE= 2V
hFE-2* DC Current Gain *:Pulse test PW≤300us,duty cycle≤1.5%
IC= 5A; VCE=2V
TIP55A
MIN MAX UNIT
250
V
1.2
V
2.5
... |
Document |
TIP55A Data Sheet
PDF 193.41KB |
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