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·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS.
egistered trademark isc Silicon NPN Power Transistors isc Product Specification TIP3055F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB=0 ICBO Collector Cutoff Current VCB= 100V; IE=0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIP3055 |
ON Semiconductor |
NPN Silicon Power Transistors |
|
| 2 | TIP3055 |
Motorola |
POWER TRANSISTORS |
|
| 3 | TIP3055 |
STMicroelectronics |
Complementary power transistors |
|
| 4 | TIP3055 |
INCHANGE |
NPN Transistor |
|
| 5 | TIP3055 |
Comset Semiconductors |
(TIP2955 / TIP3055) Silicon Power Transistors |
|
| 6 | TIP3055T |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | TIP30 |
Central Semiconductor |
PNP POWER TRANSISTORS |
|
| 8 | TIP30 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 9 | TIP30 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 10 | TIP30 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 11 | TIP30 |
SavantIC |
Silicon PNP Power Transistors |
|
| 12 | TIP30 |
INCHANGE |
PNP Transistor |
|