TIP3055F |
Part Number | TIP3055F |
Manufacturer | INCHANGE |
Description | ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type TIP2955F ·Minimum Lot-to-Lot variations ... |
Features |
egistered trademark
isc Silicon NPN Power Transistors
isc Product Specification
TIP3055F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
ICBO
Collector Cutoff Current
VCB= 100V; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
... |
Document |
TIP3055F Data Sheet
PDF 198.49KB |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TIP3055 |
ON Semiconductor |
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2 | TIP3055 |
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3 | TIP3055 |
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4 | TIP3055 |
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5 | TIP3055 |
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