TIP122FP Transistor Datasheet

TIP122FP Transistor

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 2 1 TO-220FP Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 70 Ω PNP: R1 = 16 kΩ R2 = 60 Ω Table 1. Device summary Ord.

Features

■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
■ TO-220FP isolated package UL compliant Application
■ General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 2 1 TO-220FP Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 70 Ω PNP: R1 = 16 kΩ R2 = 60 Ω Table 1. Device summary Order codes Marking TIP122FP TIP122FP TIP127FP TIP127.

The same part from a different manufacturer

TIP122FP - Inchange Semiconductor

·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Col.

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TIP122FP - STMicroelectronics