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Complementary Silicon Transistors, Plastic, Medium-Power TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc.
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant
DATA SHEET www.onsemi.com
4
1 2 3
1. Base 2. Collector 3. Emitter 4. Collector
TO−220AB CASE 221A
STYLE 1
DARLINGTON 8 AMPERE COMPLEMENTARY SIL.
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TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVIS.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIP100 |
INCHANGE |
NPN Transistor |
|
| 2 | TIP100 |
Central Semiconductor |
Silicon Power darlington Complementary transistors |
|
| 3 | TIP101 |
SemiHow |
NPN Epitaxial Silicon Transistor |
|
| 4 | TIP101 |
TAITRON |
Darlington NPN Power Transistors |
|
| 5 | TIP101 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Darlington Transistor |
|
| 6 | TIP101 |
Motorola |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 7 | TIP101 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|
| 8 | TIP101 |
CDIL |
NPN PLASTIC POWER TRANSISTORS |
|
| 9 | TIP101 |
MCC |
NPN Plastic Medium-Power Silicon Transistors |
|
| 10 | TIP101 |
INCHANGE |
NPN Transistor |
|
| 11 | TIP101 |
ON Semiconductor |
Silicon NPN Transistor |
|
| 12 | TIP101 |
Comset Semiconductors |
(TIP100 - TIP102) Silicon NPN Darlington Power Transistors |
|
