TICP107M - Power Innovations Limited

TICP107M SILICON CONTROLLED RECTIFIERS

TICP107 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 2000, Power Innovations Limited, UK JANUARY 1999 - REVISED JUNE 2000 G G G G G G G 1 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage IGT 50 µA min, 200 µA max di/dt 100A/µs Package Options PACKAGE LP LP with fomed leads PACKING Bulk Tape and Re.

Features

ture 3.2 mm from case for 10 seconds TICP107D TICP107M TICP107D TICP107M SYMBOL VDRM VRRM IT(RMS) ITSM di/dt IGM TJ Tstg TL VALUE 400 600 400 600 1 15 100 0.2 -40 to +110 -40 to +125 230 UNIT V V A A A/µs A °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibriu.