TICP106D - Power Innovations Limited

TICP106D SILICON CONTROLLED RECTIFIERS

TICP106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1997, Power Innovations Limited, UK MARCH 1988 - REVISED MARCH 1997 q q q q q q 2 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage Max IGT of 200 µA Package Options PACKAGE LP LP with fomed leads PACKING Bulk Tape and Reel PART # SUFFIX (None) R.

Features

VRRM IT(RMS) ITSM IGM PG(AV) TC Tstg TL VALUE 400 600 400 600 2 15 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 85°C derate linearly to zero at 110°C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum ave.