TIC263 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q q q q q q High Current Triacs 25 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 175 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) MT2 2 SOT-93 PACKAGE (TOP VIEW) MT1 1 G 3 Pin 2 is in electrical contact with the mounting .
between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 625 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM Repetitive peak off-state current Peak gate trigger current VD = Rated.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC263 |
Power Innovations Limited |
SILICON TRIACS | |
2 | TIC263M |
Power Innovations Limited |
SILICON TRIACS | |
3 | TIC263N |
Power Innovations Limited |
SILICON TRIACS | |
4 | TIC263S |
Power Innovations Limited |
SILICON TRIACS | |
5 | TIC266 |
Power Innovations Limited |
SILICON TRIACS | |
6 | TIC266D |
Power Innovations Limited |
SILICON TRIACS | |
7 | TIC266M |
Power Innovations Limited |
SILICON TRIACS | |
8 | TIC266N |
Power Innovations Limited |
SILICON TRIACS | |
9 | TIC266S |
Power Innovations Limited |
SILICON TRIACS | |
10 | TIC201 |
Power Innovations Limited |
SILICON TRIACS | |
11 | TIC206 |
Power Innovations Limited |
SILICON TRIACS | |
12 | TIC206A |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |