TIC256 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK JULY 1991 - REVISED MARCH 1997 q q q q q q High Current Triacs 20 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 150 A Peak Current Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA TO-220 PACKAGE (TOP VIEW) MT1 MT2 .
ween the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM Repetitive peak off-state current Peak gate trigger current VD = Rated VDR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC256 |
Power Innovations Limited |
SILICON TRIACS | |
2 | TIC256M |
Power Innovations Limited |
SILICON TRIACS | |
3 | TIC256N |
Power Innovations Limited |
SILICON TRIACS | |
4 | TIC256S |
Power Innovations Limited |
SILICON TRIACS | |
5 | TIC253 |
Power Innovations Limited |
SILICON TRIACS | |
6 | TIC253D |
Power Innovations Limited |
SILICON TRIACS | |
7 | TIC253M |
Power Innovations Limited |
SILICON TRIACS | |
8 | TIC253N |
Power Innovations Limited |
SILICON TRIACS | |
9 | TIC253S |
Power Innovations Limited |
SILICON TRIACS | |
10 | TIC201 |
Power Innovations Limited |
SILICON TRIACS | |
11 | TIC206 |
Power Innovations Limited |
SILICON TRIACS | |
12 | TIC206A |
Comset Semiconductors |
(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |