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TIC226D - Inchange Semiconductor

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TIC226D Triacs

isc Triacs TIC226D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitiv.

Features


·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 50 mA (Quadrants 1~3)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(RMS) RMS on-state current (full sine wave)TC=85℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 1.

The same part from a different manufacturer

Datasheet TIC226D - BOURNS TIC226D

TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrant.

Datasheet TIC226D - Comset Semiconductor TIC226D

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by eit.

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