isc Triacs TIC226D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitiv.
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 50 mA (Quadrants 1~3)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state voltage
400
V
VRRM Repetitive peak reverse voltage
400
V
IT(RMS) RMS on-state current (full sine wave)TC=85℃
8
A
ITSM Non-repetitive peak on-state current
70
A
Tj
Operating junction temperature
110
℃
Tstg Storage temperature
-45~150 ℃
Rth(j-c) Thermal resistance, junction to case
1.
TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrant.
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by eit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC226 |
BOURNS |
SILICON TRIACS | |
2 | TIC226 |
INCHANGE |
Triac | |
3 | TIC226A |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
4 | TIC226B |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
5 | TIC226C |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
6 | TIC226E |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
7 | TIC226M |
BOURNS |
SILICON TRIACS | |
8 | TIC226M |
Inchange Semiconductor |
Triacs | |
9 | TIC226M |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
10 | TIC226N |
BOURNS |
SILICON TRIACS | |
11 | TIC226N |
Inchange Semiconductor |
Triacs | |
12 | TIC226N |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR |