This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MAXIMUM RATINGS Value A VDRM Symbol Ratings B C Unit M S N V A A A A W W °C °C °C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see.
temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1.6 mm from case for 10 230 TL seconds Page 1 of 3 SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Notes: 1. 2. 3. 4. 5. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C de.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIC226 |
BOURNS |
SILICON TRIACS | |
2 | TIC226 |
INCHANGE |
Triac | |
3 | TIC226A |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
4 | TIC226B |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
5 | TIC226D |
BOURNS |
SILICON TRIACS | |
6 | TIC226D |
Inchange Semiconductor |
Triacs | |
7 | TIC226D |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
8 | TIC226E |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
9 | TIC226M |
BOURNS |
SILICON TRIACS | |
10 | TIC226M |
Inchange Semiconductor |
Triacs | |
11 | TIC226M |
Comset Semiconductor |
SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
12 | TIC226N |
BOURNS |
SILICON TRIACS |