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TIC225M - Inchange Semiconductor

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TIC225M Triacs

isc Triacs TIC225M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive p.

Features


·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 5 mA (Quadrants 1)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 2.5 .

The same part from a different manufacturer

Datasheet TIC225M - Comset Semiconductors TIC225M

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by eit.

Datasheet TIC225M - BOURNS TIC225M

TIC225 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off.

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