TGF2021-04-SD - TriQuint Semiconductor

TGF2021-04-SD DC-4 GHz Packaged Power pHEMT

The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package. The device’s ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 16 dB gai.

Features

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• Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance:
• OTOI: 39.5 dBm
• Noise Figure: 0.6dB
• Gain: 16dB
• P1dB: 26.5dBm
• Input Return Loss: -8 dB
• Output Return Loss: -18 dB
• Bias: Vd = 5 V, Id = 150 mA, Vg = -0.8 V (Typical) 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Primary Applications
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• Cellular Base Stations WiMAX Wireless Infrastructure Low Noise Amplifiers www.DataSheet.net/ Product Description The TGF2021-04-SD is a high performance pseu.