TG2216TU - Toshiba Semiconductor

TG2216TU GaAs Linear Integrated Circuit GaAs Monolithic

RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. GND port. The distance between this pin and ground pattern should be as short as possible for RF performance. RF port. When VC1 = Lo and VC2 = Hi, this port is connected to RFcom. An external DC blocking capa.

Features

www.DataSheet4U.com
·
·
·
·
· Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz = 0.7dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 23dB (typ.) @2.5 GHz High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: UF6 package (2.0 × 2.1 × 0.7 mm) Weight: 0.007g (typ.) Pin Connection and Marking (top view) VC1 6 RFcom 5 VC2 4 Equivalent Circuit VC1 6 RFcom 5 VC2 4 US 1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2 Maximum Ratings (Ta = 25°C) Characteristics Control voltage Input power Total power dissipation Operating temperature range Storage t.