TG2213S - Toshiba

TG2213S GaAs Linear Integrated Circuit GaAs Monolithic

RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. GND port. The distance between this pin and ground pattern should be as short as possible for RF performance. RF port. When VC1 = Lo and VC2 = Hi, this port is connected to RFcom. An external DC blocking capa.

Features

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· Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz = 0.45dB (typ.) @2.5 GHz High isolation: ISL = 24dB (typ.) @1.0 GHz = 22dB (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: sES6 package (1.5 × 1.5 × 0.52 mm) Pin Assignment, Marking (top view) VC1 6 RFcom 5 VC2 4 Block Diagram VC1 6 RFcom 5 VC2 4 JEDEC JEITA TOSHIBA ― ― 2-2Q1A UP 1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2 Weight: 2.1 mg (typ.) Maximum Ratings (Ta = 25°C) Characteristics Control voltage Input power Total power dissipation Operating temperature range Storage temperature range Symbol VC1 VC2 Pi PD (N.