TEC8013 - Toshiba

TEC8013 Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC8013 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. FEATURES . Excellent hpg Linearity : h FE (2)=23(Min.) at VcE=lV, I c =400mA . 1 Watt Amplifier Applications . Complementary to TEC8012 Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTI.

Features

. Excellent hpg Linearity : h FE (2)=23(Min.) at VcE=lV, I c =400mA . 1 Watt Amplifier Applications . Complementary to TEC8012 Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT 1.27 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation VCBO VCEO VEBO IC IB PC 40 30 500 mA 100 mA 625 mW 1. EMITTER 2. BASE 3. COLLECTOR Junction Temperature Storage Temperature Range Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) 150 -55-150 EIAJ TOSHIBA Weight : 0.21g SC-43 2-5 Pi V CHARACTERI.