TEC8012 - Toshiba

TEC8012 Silicon PNP Transistor

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TEC8012 DRIVER STAGE AMPLIFIER APPLICA TIONS. Unit in mm SWITCHING APPLICATIONS. FEATURES . Excellent hFE Linearity : hFE(2)=23(Min.) at VCE =-lV, I C =- 400mA . 1 Watt Amplifier Application . Complementary to TEC8013 51 MAX. : - ' it CL45 j 1 Q55MAX. ,| Q45 ' < S 00 M 1 30 S C5 r-i MAXIMUM RATINGS .

Features

. Excellent hFE Linearity : hFE(2)=23(Min.) at VCE =-lV, I C =- 400mA . 1 Watt Amplifier Application . Complementary to TEC8013 51 MAX. : - ' it CL45 j 1 Q55MAX. ,| Q45 ' < S 00 M 1 30 S C5 r-i MAXIMUM RATINGS (Ta=25°C) 1 . CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING -40 -30 -5 -500 -100 625 150 -55-150 UNIT V V V mA mA mW °C °C 1.27 1.27 , x.