TE28F640P30 - Intel Corporation

TE28F640P30 (TE28FxxxP30) Strata Flash Embedded Memory

at any time, without notice. This document contains information on products in the design phase of development. The information here is subject to change without notice. Do not finalize a design with this information. StrataFlash® Embedded Memory (P30) Contact your local Intel sales office or your distributor to obtain the latest specifications and before p.

Features

■ High performance
■ Security — 85/88 ns initial access — One-Time Programmable Registers:
• 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to
• 64 user-programmable OTP bits data output synchronous-burst read mode
• Additional 2048 user-programmable OTP bits — 25 ns asynchronous-page read mode — Selectable OTP Space in Main Array: — 4-, 8-, 16-, and continuous-word burst mode
• 4x32KB parameter blocks + 3x128KB main — Buffered Enhanced Factory Programming blocks (top or bottom configuration) (BEFP) at 5 µs/byte (Typ) — Absolute write protection: VPP = VSS .