TE28F640B3 - Intel Corporation

TE28F640B3 (TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory

Intel® Advanced Boot Block Flash Memory (B3) 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option — Reduces overall system power • High Performance — 2.7 V – 3.6 V: 70 ns max access tim.

Features

• Flexible SmartVoltage Technology — 2.7 V
  – 3.6 V read/program/erase — 12 V VPP fast production programming
• 1.65 V
  – .5 V or 2.7 V
  – 3.6 V I/O option — Reduces overall system power
• High Performance — 2.7 V
  – 3.6 V: 70 ns max access time
• Optimized Block Sizes — Eight 8-KB blocks for data, top or bottom locations — Up to 127 x 64-KB blocks for code
• Block Locking — VCC-level control through Write Protect WP#
• Low Power Consumption — 9 mA typical read current
• Absolute Hardware-Protection — VPP = GND option — VCC lockout voltage
• Extended Temperature Operation —
  –40 °C to +85 °C
• Aut.