The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The I Uh1664,J features low power dissipation when the device is deselected using chip enable (CE), and has an output H.
low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls.
The TCS~)1664J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are 11 L compatible.
The TC5E)1664,j is available in a 400mil width, 44-pin SOJ suitable for high density surface assembly.
Features
• Fast access time
TC551 Gfi4J 1Ei 15ns (max.) - TCb51f3(l!kj -20 20ns (max.)
TCb~) 1He'LJ 2b 25ns (max.)
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• L.ow power dlssip.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TC551664J-25 |
Toshiba |
SILICON GATE CMOS STATIC RAM | |
2 | TC551664J-15 |
Toshiba |
SILICON GATE CMOS STATIC RAM | |
3 | TC551664AJ |
Toshiba Semiconductor |
65536 Word x 16-Bit CMOS Static RAM | |
4 | TC551632J |
Toshiba Semiconductor |
32K Word x 16-Bit CMOS Static RAM | |
5 | TC551632J-20 |
Toshiba |
32K Word x 16-Bit CMOS Static RAM | |
6 | TC551632J-25 |
Toshiba |
32K Word x 16-Bit CMOS Static RAM | |
7 | TC551632J-35 |
Toshiba |
32K Word x 16-Bit CMOS Static RAM | |
8 | TC5516A |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM | |
9 | TC5516AF |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM | |
10 | TC5516AF-2 |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM | |
11 | TC5516AFL |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM | |
12 | TC5516AFL-2 |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM |