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The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable hi~peed operation. The TC551632J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input .
low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. Byte access is supported by upper and lower byte controls.
The TC551632J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible.
The TC551632J is available in a 400mil width, 40-pin SOJ suitable for high density surface assembly.
Features
• Fast access time - TC551632J-20 20ns (max.) - TC551632J-25 25ns (max.) - TC551632J-35 35ns (max.)
• Low power dissipation
Cycle Time
20
Ope.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC551632J-25 |
Toshiba |
32K Word x 16-Bit CMOS Static RAM |
|
| 2 | TC551632J-35 |
Toshiba |
32K Word x 16-Bit CMOS Static RAM |
|
| 3 | TC551632J |
Toshiba Semiconductor |
32K Word x 16-Bit CMOS Static RAM |
|
| 4 | TC551664AJ |
Toshiba Semiconductor |
65536 Word x 16-Bit CMOS Static RAM |
|
| 5 | TC551664J-15 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 6 | TC551664J-20 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 7 | TC551664J-25 |
Toshiba |
SILICON GATE CMOS STATIC RAM |
|
| 8 | TC5516A |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM |
|
| 9 | TC5516AF |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM |
|
| 10 | TC5516AF-2 |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM |
|
| 11 | TC5516AFL |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM |
|
| 12 | TC5516AFL-2 |
Toshiba Semiconductor |
2048 WORD x 8 BIT CMOS STATIC RAM |
|