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The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) inpu.
a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIVI/ thus simplifying the microprocessor interface.
The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type).
Features
• Organization: 524,288 words x 8 bits
• Single 5V power supply
• Fast access time
TC518512PL Family
tCEA IT Access Time tOEA O'E' Access Time
tRC Cycle Time Power Dissipation Self Refresh Current
-70 70ns 30ns 115ns 385mW
-80 80ns 30ns 13.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC518512TRL-70DR |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 2 | TC518512TRL-70LT |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 3 | TC518512TRL-70LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 4 | TC518512TRL-10 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 5 | TC518512TRL-10DR |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 6 | TC518512TRL-10LT |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 7 | TC518512TRL-10LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 8 | TC518512TRL-80 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 9 | TC518512TRL-80DR |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 10 | TC518512TRL-80LT |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 11 | TC518512TRL-80LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|
| 12 | TC518512FI-10 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |
|