The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .b!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input .
a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL-(LT) is guaranteed over an operating temperature range of -20 - 7LfC. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastiC flat package, and a thin small outline package (forward type, reve.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TC518512TRL-10LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
2 | TC518512TRL-10 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
3 | TC518512TRL-10DR |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
4 | TC518512TRL-70 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
5 | TC518512TRL-70DR |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
6 | TC518512TRL-70LT |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
7 | TC518512TRL-70LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
8 | TC518512TRL-80 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
9 | TC518512TRL-80DR |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
10 | TC518512TRL-80LT |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
11 | TC518512TRL-80LV |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM | |
12 | TC518512FI-10 |
Toshiba |
SILICON GATE CMOS PSEUDO STATIC RAM |