The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol CONDITIONS NF Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz .
•
•
•
•
•
•
•
• 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested
• Low Cost Plastic SOT143 Package
PHOTO ENLARGEMENT
DESCRIPTION The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent qua.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TC221 |
ETCTI |
Small-Format CCD Image Sensors (Rev. C) | |
2 | TC2201 |
Transcom |
Plastic Packaged Low Noise PHEMT GaAs FETs | |
3 | TC220C |
Toshiba |
(TC220C/E) DRAM Core | |
4 | TC220E |
Toshiba |
(TC220C/E) DRAM Core | |
5 | TC220LL |
Allied Components International |
Toroidal Chokes Low Loss | |
6 | TC2281 |
Transcom |
Low Noise and High Dynamic Range Packaged GaAs FETs | |
7 | TC2282 |
Transcom |
Low Noise Ceramic Packaged PHEMT GaAs FETs | |
8 | TC22V |
Tak Cheong |
500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators | |
9 | TC20 |
NEC |
Small Induction Transistor | |
10 | TC20-11 |
ETC |
50MM (2.0 INCH) 5 X 7 DOT MATRIX DISPLAYS | |
11 | TC20-x |
Microsonics |
Peripheral | |
12 | TC200 |
UTC |
EPITAXIAL PLANAR NPN TRANSISTOR |