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TC2211 |
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| Part Number | TC2211 |
| Manufacturer | Transcom |
| Description | The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All device... |
| Features |
• • • • • • • • 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested • Low Cost Plastic SOT143 Package PHOTO ENLARGEMENT DESCRIPTION The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent qua... |
| Document |
 TC2211 Data Sheet
PDF 215.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TC221 |
ETCTI |
Small-Format CCD Image Sensors (Rev. C) |
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| 2 | TC2201 |
Transcom |
Plastic Packaged Low Noise PHEMT GaAs FETs |
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| 3 | TC220C |
Toshiba |
(TC220C/E) DRAM Core |
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| 4 | TC220E |
Toshiba |
(TC220C/E) DRAM Core |
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| 5 | TC220LL |
Allied Components International |
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