SiZ342BDT - Vishay

SiZ342BDT Dual N-Channel MOSFET

www.vishay.com SiZ342BDT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 30 0.00965 0.0145 4 32.9 a Dual ORDE.

Features

• TrenchFET® Gen IV power MOSFET
• High side and low side MOSFETs form optimized combination for 50 % duty cycle
• Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous buck
• DC/DC conversion
• Half bridge
• POL D1 G1 N-Channel 1 MOSFET S1/D2 PowerPAIR 3 x 3 SiZ342BDT-T1-GE3 G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-sourc.