SiRC10DP - Vishay

SiRC10DP N-Channel MOSFET

www.vishay.com SiRC10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET With Schottky Diode PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.0035 0.0052 11.2 60 a, g Single FEATURES • Trenc.

Features

• TrenchFET® Gen IV power MOSFET
• SKYFET® with monolithic Schottky diode
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D
• Synchronous buck
• Synchronous rectification
• DC/DC conversion G Schottky Diode S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 Single SiRC10DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain curre.