SiR104LDP - Vishay

SiR104LDP N-Channel MOSFET

www.vishay.com SiR104LDP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 100 0.0061 0.0077 33 81 Single FEATURES • TrenchFET® Gen IV power MOSFET.

Features

• TrenchFET® Gen IV power MOSFET
• Very low RDS x Qg figure-of-merit (FOM)
• Tuned for the lowest RDS x Qoss FOM
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous rectification
• Primary side switch
• DC/DC converters
• Power supplies
• Motor drive control
• Battery and load switch D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK® SO-8 SiR104LDP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source volta.