Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a .
• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
Available
• Sink to lead creepage distance = 4.8 mm
Available
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiHFI744G |
Vishay Siliconix |
Power MOSFET | |
2 | SiHFI720G |
Vishay Siliconix |
Power MOSFET | |
3 | SiHFI730G |
Vishay Siliconix |
Power MOSFET | |
4 | SiHFI734G |
Vishay Siliconix |
Power MOSFET | |
5 | SiHFI510G |
Vishay Siliconix |
Power MOSFET | |
6 | SiHFI520G |
Vishay Siliconix |
Power MOSFET | |
7 | SIHFI530G |
Vishay |
Power MOSFET | |
8 | SiHFI540G |
Vishay Siliconix |
Power MOSFET | |
9 | SiHFI614G |
Vishay Siliconix |
Power MOSFET | |
10 | SiHFI620G |
Vishay Siliconix |
Power MOSFET | |
11 | SiHFI624G |
Vishay Siliconix |
Power MOSFET | |
12 | SiHFI630G |
Vishay Siliconix |
Power MOSFET |