Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a l.
400 1.0
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
Available
RoHS
*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiHFI734G |
Vishay Siliconix |
Power MOSFET | |
2 | SiHFI720G |
Vishay Siliconix |
Power MOSFET | |
3 | SiHFI740G |
Vishay Siliconix |
Power MOSFET | |
4 | SiHFI744G |
Vishay Siliconix |
Power MOSFET | |
5 | SiHFI510G |
Vishay Siliconix |
Power MOSFET | |
6 | SiHFI520G |
Vishay Siliconix |
Power MOSFET | |
7 | SIHFI530G |
Vishay |
Power MOSFET | |
8 | SiHFI540G |
Vishay Siliconix |
Power MOSFET | |
9 | SiHFI614G |
Vishay Siliconix |
Power MOSFET | |
10 | SiHFI620G |
Vishay Siliconix |
Power MOSFET | |
11 | SiHFI624G |
Vishay Siliconix |
Power MOSFET | |
12 | SiHFI630G |
Vishay Siliconix |
Power MOSFET |