SiHF18N50C - Vishay

SiHF18N50C Power MOSFET

SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single TO-220 TO-220 FULLPAK 0.225 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved trr/Qrr • Improved .

Features

• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved trr/Qrr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC G S D G GDS ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET TO-220 SiHP18N50C-E3 TO-220 FULLPAK SiHF18N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb VGS at 10 V TC = 25 °C TC = 100 °C VGS ID IDM Lin.