www.vishay.com SiHF065N60E Vishay Siliconix E Series Power MOSFET TO-220 FULLPAK D G GDS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 74 19 15 Single 0.057 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effectiv.
• 4th generation E series technology
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORMATION
Package Lead (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiHF074N65E |
Vishay |
Power MOSFET | |
2 | SIHF12N50C |
Vishay Siliconix |
Power MOSFET | |
3 | SIHF12N60E |
Vishay |
Power MOSFET | |
4 | SiHF15N60E |
Vishay |
Power MOSFET | |
5 | SIHF16N50C |
Vishay Siliconix |
Power MOSFET | |
6 | SiHF18N50C |
Vishay |
Power MOSFET | |
7 | SiHF22N60E |
Vishay |
Power MOSFET | |
8 | SiHF22N65E |
Vishay |
Power MOSFET | |
9 | SiHF22N65E |
INCHANGE |
N-Channel MOSFET | |
10 | SiHF23N60E |
Vishay |
Power MOSFET | |
11 | SIHF30N60E |
Vishay |
MOSFET | |
12 | SIHF35N60E |
Vishay |
MOSFET |