www.vishay.com SiHB24N80AE Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 89 15 30 Single 0.160 FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switchi.
• Low figure-of-merit (FOM) Ron x Qg
• Low effective capacitance (Co(er))
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORMATION
Package Lead (Pb)-free and halo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiHB24N65E |
Vishay |
E Series Power MOSFET | |
2 | SIHB24N65EF |
Vishay |
MOSFET | |
3 | SiHB20N50E |
Vishay |
E Series Power MOSFET | |
4 | SiHB21N60EF |
Vishay |
Power MOSFET | |
5 | SiHB21N65EF |
Vishay |
Power MOSFET | |
6 | SIHB22N60AE |
Vishay |
MOSFET | |
7 | SiHB22N60E |
Vishay Siliconix |
E Series Power MOSFET | |
8 | SiHB22N60E |
INCHANGE |
N-Channel MOSFET | |
9 | SiHB22N60S |
Vishay |
S Series Power MOSFET | |
10 | SiHB22N65E |
Vishay |
Power MOSFET | |
11 | SiHB065N60E |
Vishay |
Power MOSFET | |
12 | SiHB085N60EF |
Vishay |
Power MOSFET |