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www.vishay.com SiHB22N65E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) GD S PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V Qg typ. (nC) ID (A) Configuration G S N-Channel MOSFET 700 0.18 32 22 Single FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate.
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters)
ORDERING I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SIHB22N60AE |
Vishay |
MOSFET |
|
| 2 | SiHB22N60E |
Vishay Siliconix |
E Series Power MOSFET |
|
| 3 | SiHB22N60E |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SiHB22N60S |
Vishay |
S Series Power MOSFET |
|
| 5 | SiHB20N50E |
Vishay |
E Series Power MOSFET |
|
| 6 | SiHB21N60EF |
Vishay |
Power MOSFET |
|
| 7 | SiHB21N65EF |
Vishay |
Power MOSFET |
|
| 8 | SiHB24N65E |
Vishay |
E Series Power MOSFET |
|
| 9 | SIHB24N65EF |
Vishay |
MOSFET |
|
| 10 | SiHB24N80AE |
Vishay |
Power MOSFET |
|
| 11 | SiHB065N60E |
Vishay |
Power MOSFET |
|
| 12 | SiHB085N60EF |
Vishay |
Power MOSFET |
|