Si4831DY - Vishay Siliconix

Si4831DY P-Channel MOSFET

Si4831DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.045 @ VGS = –10 V 0.090 @ VGS = –4.5 V ID (A) "5 "3.5 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 3 S K SO-8 A A S G 1 2 3 4 Top View 8 7 6 5 K K D D G D P-Channel MOSFET .

Features

_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit
  –30 30 "20 "5 "3.9 "20
  –1.7 3 20 2 1.28 1.83 1.17
  –55 to 150 Unit V A W _C 2-1 Si4831DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a New Product Device MOSFET Schottky MOSFET Schottky MOSFET Symbol Typical 52 56 Maximum 62.5 68 100 110 33 40 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 82 91 27 _C/W Maximum Junction-to-Foot Schottky Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. RthJF 32 MOSFET S.