SI4835BDY - Vishay Siliconix

SI4835BDY P-Channel 30-V (D-S) MOSFET

www.DataSheet4U.com Si4835BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 0.030 @ VGS = - 4.5 V - 7.5 FEATURES ID (A) - 9.6 rDS(on) (W) 0.018 @ VGS = - 10 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs S SO-8 S S S G 1 2 3 4 Top View.

Features

ID (A) - 9.6 rDS(on) (W) 0.018 @ VGS = - 10 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs S SO-8 S S S G 1 2 3 4 Top View P-Channel MOSFET Ordering Information: Si4835BDY Si4835BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Rang.