Si4668DY - Vishay

Si4668DY N-Channel 25-V (D-S) MOSFET

N-Channel 25-V (D-S) MOSFET Si4668DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 25 0.0125 at VGS = 4.5 V ID (A)a 16.2 13 Qg (Typ.) 12.4 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4668DY-T1-E3 (Lead (Pb)-free) Si4668DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested APPLICATIONS
• Synchronous Buck - High Side D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation .