SI4666DY - Vishay

SI4666DY N-Channel MOSFET

www.DataSheet.co.kr Si4666DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.010 at VGS = 10 V 0.011 at VGS = 4.5 V 0.014 at VGS = 2.5 V ID (A)a 16.5 15.8 14 10.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directiv.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Synchronous Buck Converter
• DC/DC Converter SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D G D D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Curre.