Si3865BDV - Vishay Siliconix

Si3865BDV Load Switch with Level-Shift

The Si3865BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a levelshift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1..

Features

• Halogen-free According to IEC 61249-2-21 Definition
• 60 m Low RDS(on) TrenchFET®: 1.8 V Rated
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint TSOP-6 Package
• 3000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Compliant to RoHS Directive 2002/95/EC Time (µS) 40 32 td(off) IL = 1 A VON/OFF = 3 V Ci = 10 µF Co = 1 µF tf 24 16 tr 8 td(on) 0 02468 R2 (k) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics Switching Variation R2 at VIN = 2.5 V, R1 = 20 k COMPONENTS R1 Pull-Up Resist.