Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS = –4.5 V 1.30 @ VGS = –3.0 V ID (A) "1.2 "1.0 "0.85 "0.75 P-Channel –20 S2 TSOP-6 Top View G1 D G2 1 6 S1 D D 2 5 G2 3 4 S2 G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C.
Unit
_C/W
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70778 S-55457—Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600
2-1
Si3850DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID =
–250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS =
–20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS =
–20 V, VGS = 0 V, TJ = 70_C On-State Drain Curr.
Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical Part Number Replacements Si3850.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI3850ADV |
Vishay Siliconix |
Specification Comparison | |
2 | Si3853DV |
Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET With Schottky Diode | |
3 | SI3812DV |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SI3861BDV |
Vishay Siliconix |
Load Switch | |
5 | SI3863DV |
Vishay Siliconix |
Load Switch with Level-Shift | |
6 | Si3865BDV |
Vishay Siliconix |
Load Switch with Level-Shift | |
7 | Si3865DV |
Vishay |
Load Switch | |
8 | SI3867DV |
Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET | |
9 | Si3879DV |
Vishay |
P-Channel MOSFET | |
10 | SI3000 |
Silicon Laboratories |
Voiceband Codec | |
11 | SI3008 |
Silicon Laboratories |
V.22BIS ISOMODEM | |
12 | SI3010 |
Silicon Laboratories |
GLOBAL SERIAL INTERFACE DIRECT ACCESS ARRANGEMENT |